| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a resist pattern with a small variation of resist pattern size per unit temperature suitable for a thermal flow process, high intrasurface uniformity in the resulting resist hole pattern size and excellent section shape. <P>SOLUTION: In a resist pattern forming method in which a resist pattern formed by applying selective exposing and developing consecutively to a positive resist film disposed on a substrate, is subjected to the thermal flow treatment to reduce the pattern size, (a) the positive resist comprises a positive resist composition comprising (A) a resin component having alkali solubility increased by an acid, (B) a compound which generates an acid upon irradiation with a radiation, (C) a compound having at least two vinyl ether groups which react with the resin component (A) upon heating to form cross-linkage and (D) an organic amine and (b) the thermal flow treatment is carried out by heating the resist pattern two or more times within the temperature range of 100-200° and the latter heating temperature is made equal to or higher than the former heating temperature. <P>COPYRIGHT: (C)2003,JPO |
