| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that an MOS field-effect transistor has gate capacitance structurally, the gate capacitance is increased as the channel area is increased and the gate oxide film is thinned, resulting in a limit due to the gate capacitance for improving high frequency operation characteristics. SOLUTION: A p-type base region 34 is formed on a surface layer of an n<SP>-</SP>type drain layer 33, and an n-type source region 35 is formed on a surface layer of the base region 34. An n-type channel region 36 is formed on a surface layer of the base region 34 between the source region 35 and the drain layer 33 so as to realize a normally-on type. A gate electrode 39 is formed striding over a part between channel regions 36 of the respective adjacent unit cells B via a gate oxide film 37 constituted of a thin silicon oxide film on an n-type channel region 36 and via a thick silicon oxide film 38 on the drain layer 33. The gate electrode 39 is so constituted that dimension in a channel length direction is shorter than the channel length, on the channel region 36. COPYRIGHT: (C)2003,JPO
|
