| 摘要 |
PROBLEM TO BE SOLVED: To simultaneously suppress an inverse narrow channel effect of a NMOS caused accompanying formation of element separation and an inverse channel effect of a PMOS. SOLUTION: A silicon oxide film 2 is formed on a silicon substrate 1, and a polycrystalline silicon film 3 is formed on the silicon oxide film 2. Then, a resist pattern 5 is formed on the polycrystalline silicon film 3 and impurities 6 are implanted inside the polycrystalline silicon film 3 in an area to form the NMOS with the resist pattern 5 as a mask. Then, the polycrystalline silicon film 3 and the silicon oxide film 2 are patterned, and an element separation groove 11 is formed with the patterned polycrystalline silicon film 3 and silicon oxide film 2 as the mask. Thereafter, a thermal oxidation processing of the silicon substrate 1 is performed. COPYRIGHT: (C)2003,JPO
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