| 摘要 |
PROBLEM TO BE SOLVED: To make a non-volatile semiconductor memory device minute or highly reliable. SOLUTION: The non-volatile semiconductor memory device is constituted of a source/drain diffusion layer 105 in a p-type well 101 formed on a silicone substrate 100, a first gate or a floating gate 107b, a second gate or a control gate (word line) 110a and a third gate 103a. The thickness of a tunnel insulation film 106a is made larger compared with that of a gate insulation film 102 in a memory cell, in which the floating gate 107b is separated from the p-type well 101 by the tunnel insulation film 106a, the third gate 103a is separated from the p-type well 101 by the gate insulation film 102, the floating gate 107b is separated from the third gate 103a by the insulation film 106b, the floating gate 107b is separated from the word line (control gate) 110a by an insulation film (ONO film) 109a and the third gate 103a is separated from the word line (control gate) 110a by a silicone oxide film 104b respectively. COPYRIGHT: (C)2003,JPO
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