| 摘要 |
PROBLEM TO BE SOLVED: To contrive to increase speed as well as reliability and reduction of power consumption in a non-volatile semiconductor memory device by thinning a polycrystalline Si layer insulation film between the floating gate and the control gate of a flash memory. SOLUTION: An inter-layer insulation film between the floating gate 106 and the control gate 111 is obtained by laminating a silicone oxide film 107, a silicone nitride film 108, a tantalum pentoxide 109 and a silicone oxide film 110. According to this method, the dielectric constant of the tantalum pentoxide formed on the silicone nitride film 108 is not lower than 50 which is higher than that of the silicone oxide film whereby the polycrystalline Si layer insulation film can be thinned. COPYRIGHT: (C)2003,JPO
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