| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To make uniform the transistor characteristics of TFTs at a high level and to manufacture the TFTs more efficiently while taking account of element characteristics required for respective regions depending on a region especially requiring high speed driving of TFT and a region not requiring high speed driving so much. <P>SOLUTION: A first region requiring a high driving capacity is irradiated with CW laser light at a low rate under a state where an a-Si film is patterned by lithography and etching into an island pattern 11 (or a ribbon pattern) whereas a second region not requiring a high driving capacity is irradiated with the CW laser light in the form of a solid a-Si film. <P>COPYRIGHT: (C)2003,JPO</p> |
