MAGNETORESISTIVE EFFECT ELEMENT AND ITS PRODUCING SYSTEM, AND MAGNETIC MEMORY

摘要

PROBLEM TO BE SOLVED: To obtain a magnetoresistive effect memory element in which good characteristics can be attained even in a multilayer film structure. SOLUTION: In the magnetoresistive effect memory element of multilayer film structure comprising two ferromagnetic layers 14c and 16 and a nonmagnetic layer 15 sandwiched between, at least one of the ferromagnetic layers 14c and 16 is composed of a material containing an element exhibiting ferromagnetism and boron. The nonmagnetic layer 15 comprises an oxide film and a damage of magnetic characteristics due to the element exhibiting ferromagnetism is suppressed by bonding oxygen preferentially to boron even if oxygen is diffused from the nonmagnetic layer 15. COPYRIGHT: (C)2003,JPO