| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the ON-resistance of a drive circuit while overheat protection is performed. <P>SOLUTION: Self-protection against overheat is performed by an overheat cut-off part 33 in a power device PD3. A charge pump 36 is provided outside the power device PD3, and a large portion of the chip area of the power device PD3 is allotted to a multisource N-channel MOS-FET 32 of a drive device. Thus, regarding the design of the chip, a large area can be allotted to the multisource N-channel MOS-FET 32 and the ON-resistance of the MOS-FET 32 can be reduced, so that the current capacity of the power device PD3 can be set large. <P>COPYRIGHT: (C)2003,JPO |
