发明名称 |
Long distance optical signal transmission semiconductor laser having n type lower layer/quantum well active layer and p type upper layer with lower layer higher refraction index upper covering. |
摘要 |
The semiconductor laser has a substrate (1) with a lower layer (2) having an n type carrier structure. An active layer (4) forms a quantum well and an upper p type structure (6) is formed. The lower layer has a higher refraction index than the upper covering.
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申请公布号 |
FR2833418(A1) |
申请公布日期 |
2003.06.13 |
申请号 |
FR20010015775 |
申请日期 |
2001.12.06 |
申请人 |
ALCATEL |
发明人 |
LOVISA STEPHANE |
分类号 |
H01S5/02;H01S5/20;H01S5/22;H01S5/32;(IPC1-7):H01S5/223 |
主分类号 |
H01S5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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