发明名称 HEAT TREATMENT EQUIPMENT AND METHOD, METHOD FOR MANUFACTURING PHOTOMASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To achieve a heat treatment of resist capable of preventing resticking of a component evaporated from a resist to the resist. <P>SOLUTION: A resist is heat-treated using the heat treatment equipment with a substrate holder 8 that holds a photomask substrate 2 and a scan heater 1 that is disposed above the photomask substrate 2, heats the substrate 2 and comprises a first heater 6 that heats a part of the substrate 2, an air supply slit 3 for ejecting gas toward the surface of the substrate 2 opposite to the first heater 6 and an air suction slit 4 for sucking gas on the substrate 2. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003167326(A) 申请公布日期 2003.06.13
申请号 JP20010367758 申请日期 2001.11.30
申请人 TOSHIBA CORP 发明人 ITO MASAMITSU
分类号 G03F7/039;G03F1/54;G03F7/20;G03F7/38;H01L21/027 主分类号 G03F7/039
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