发明名称 MAGNETIC RANDOM ACCESS MEMORY
摘要 PROBLEM TO BE SOLVED: To decide a pitch of TMR elements without being affected by the number of transistors at an array peripheral part. SOLUTION: The TMR elements 10 are stacked on a semiconductor substrate in multiple stages. To the TMR elements 10, upper wiring 11 and lower wiring 12 extended in an X direction are connected. The number of the TMR elements 10 arranged in each stage is gradually increased from a lower stage to an upper stage. Regarding the upper wiring 11, the upper wiring 11 positioned at the lower stage is connected to the transistor present near an array of the TMR elements, and the upper wiring 11 positioned at the upper stage is connected to the transistor far away from the array of the TMR elements. Regarding the lower wiring 12 as well, the upper wiring 11 at the lower stage is connected to the transistor near the array of the TMR elements compared to the upper wiring 11 at the upper stage. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003168784(A) 申请公布日期 2003.06.13
申请号 JP20010367753 申请日期 2001.11.30
申请人 TOSHIBA CORP 发明人 KAJIYAMA TAKESHI
分类号 G11C11/14;G11C11/15;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01L27/105 主分类号 G11C11/14
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