| 摘要 |
Insulation films 45, 56 having a contact hole 58 are formed on a substrate. A dummy plug 62 is formed in the contact hole 58. Insulation films 64, 66 are formed on the insulation film 56. An opening 70 for exposing at least a part of the dummy plug 62 is formed in the insulation films 64, 66. The dummy plug 62 is selectively removed through the opening 70. A storage electrode 72 is formed in the contact hole 58 and the opening 70. The insulation film 66 is selectively removed. A dielectric film 74 and a plate electrode are formed on the storage electrode 72. Whereby, without an extra support for supporting the storage electrode 72, the storage electrode 72 is prevented form falling down or peeling off, and defective contact and breakage of the lower structure due to disalignment can be precluded.
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