COPPER ELECTROPLATING METHOD, PURE COPPER ANODE FOR COPPER ELECTROPLATING, AND SEMICONDUCTOR WAFER PLATED THEREBY WITH LITTLE PARTICLE ADHESION

摘要

An copper electroplating method for performing copper electroplating by using an anode formed of pure copper in which the grain size of the pure copper anode is not greater than 10 microm, or not smaller than 60 microm, or pure copper non-recrystallized. A copper electroplating method of a semiconductor wafer which can suppress generation of particles such as sludge on the anode side in plating liquid and prevent adhesion of particles to the semiconductor wafer when performing the copper electroplating, a pure copper anode for the copper electroplating, and the semiconductor wafer plated thereby with little adhesion of particles.