| 摘要 |
PURPOSE: A method for controlling a magnetization easy axis of a ferroelectric film using a voltage, a non-volatile, a high-integrated, and a power-saving magnetic memory using the same, and a method for recording information are provided to control the spin direction of the ferroelectric film by using an inverse magnetostriction effect and an inverse piezoelectricity effect. CONSTITUTION: A magnetic memory includes a piezoelectric layer(21), a free magnetic layer(22), a fixed magnetic layer(24), and a non-magnetic layer(22). The piezoelectric layer is formed with a piezoelectric element which is selected from PZT, PLZT, BLY, and SBT. The thickness of the piezoelectric layer is less than 500nm. The magnetic layer is selected from CoPd or ABC alloy where A is Co, Fe, Ni and B is Co, Fe, Ni and C is Pd, Pt, Au, Cu, Al, W. The thickness of the magnetic layer is less than 50nm. The electric field is formed by applying a voltage to an electrode layer in a stacked structure of the electrode layer, the piezoelectric layer, and the magnetic layer. A magnetization easy axis of the magnetic layer is switched between a thin film and a vertical axis by the magnetic field.
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