发明名称 PACKAGED INTEGRATED CIRCUIT AND METHOD THEREFOR
摘要 To mitigate mold encapsulant bleeding and solder mask cracking in plastic semiconductor packages, a damming structure constructed from metal traces is formed in-line with the encapsulant perimeter. In one embodiment, each damming trace is connected to only one electrical trace, which includes a bonding connection, a signal portion and a plating portion. The damming traces can consist of one trace that is wider than any of the signal traces or multiple rows of traces, for example. The result is a reduction in mold encapsulant bleeding and, thus, an eradication of the processes performed to clean the bleeding.
申请公布号 US2003106707(A1) 申请公布日期 2003.06.12
申请号 US20010013401 申请日期 2001.12.11
申请人 VO NHAT D. 发明人 VO NHAT D.
分类号 H01L21/56;(IPC1-7):H05K1/00;H01L21/44;H01L21/48;H01L21/50 主分类号 H01L21/56
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