发明名称 Semiconductor device manufacturing method and semiconductor device
摘要 In the re-wiring formation process of a WLCSP, at least some of the re-wiring lines 3 that connect the bonding pads 1 and bump pads 2 of the semiconductor chips are formed using a photolithographic process that does not use a photomask. In this re-wiring formation process, standard portions are formed by development following photomask exposure, and portions that are to be designed corresponding to customer specifications are subjected to additional development following additional maskless exposure in the final stage.
申请公布号 US2003109079(A1) 申请公布日期 2003.06.12
申请号 US20020207083 申请日期 2002.07.30
申请人 YAMAGUCHI YOSHIHIDE;TENMEI HIROYUKI;HOZOJI HIROSHI;KANDA NAOYA 发明人 YAMAGUCHI YOSHIHIDE;TENMEI HIROYUKI;HOZOJI HIROSHI;KANDA NAOYA
分类号 H01L21/3213;H01L21/60;H01L21/822;H01L23/12;H01L23/31;H01L23/485;H01L23/525;H01L23/528;H01L27/04;(IPC1-7):H01L21/44;H01L21/48;H01L21/50 主分类号 H01L21/3213
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