发明名称 |
High fill factor CMOS image sensor |
摘要 |
A CMOS image sensor structure for improving the fill factor due to design rule limitations of a conventional image sensor that incorporates a photo diode and three N-type transistors. In a first embodiment, two N-type transistors are changed to P-type transistors and the P-type transistors are formed directly within the N-well of the photo diode. In a second embodiment, the other reset N-type transistor is changed to a reset diode and the reset diode is also formed directly within the N-well of the photo diode. In a third embodiment, the reset diode and the source follower transistor are implemented using a single transistor. In addition, the output selection transistors inside all three types of CMOS image sensor structures may be deleted to increase the fill factor even further.
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申请公布号 |
US2003107107(A1) |
申请公布日期 |
2003.06.12 |
申请号 |
US20020068228 |
申请日期 |
2002.02.06 |
申请人 |
CHANG HSIEN-CHUN;KING YA-CHIN |
发明人 |
CHANG HSIEN-CHUN;KING YA-CHIN |
分类号 |
H01L27/082;H01L27/14;H01L27/146;(IPC1-7):H01L27/082 |
主分类号 |
H01L27/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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