发明名称 Quantum size effect type micro electron gun and flat display unit using it and method for manufacturing the same
摘要 A micro electron gun that is capable of extracting electrons from a semiconductor utilizing a quantum size effect and that can be mounted individually for each of pixels is disclosed, as well as a picture display apparatus using such electron guns which is high in quantum efficiency, of high brightness and thin, as well as methods of manufacture thereof. Conduction electrons from a n-type semiconductor substrate (2) are accelerated under an electric field through a layer or layers (4) of quantum size effect micro particles (3) formed on surfaces of the n-type semiconductor substrate (2) and passed therethrough without undergoing phonon scattering, so that they when arriving at an electrode (5) may possess an amount of energy not less than the work function of the electrode (5) and are thus allowed to spring out into a vacuum. Such a quantum size effect micro particle (3) comprises a micro particle of a single crystal semiconductor in a nanometer order having electron energy levels made so discrete that no phonon scattering is brought about, and on its surface area an insulator so thin that an electron is capable of tunneling therethrough.
申请公布号 US2003109091(A1) 申请公布日期 2003.06.12
申请号 US20020275959 申请日期 2002.11.18
申请人 ODA SHUNRI;ZHAO XINWEI;NISHIGUCHI KATSUHIKO 发明人 ODA SHUNRI;ZHAO XINWEI;NISHIGUCHI KATSUHIKO
分类号 H01J1/312;H01J9/02;H01J29/04;H01J31/12;H01L21/203;H01L21/205;H01L29/66;H01L29/80;(IPC1-7):H01L21/823 主分类号 H01J1/312
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