发明名称 Synchronous semiconductor memory has memory bank which executes read operation, when write operation is executed by another memory bank
摘要 <p>The memory includes a pair of memory banks having access to a common input/output line. One of the memory banks executes a read operation on a memory cell, when the other memory bank executes a write operation on a different memory cell.</p>
申请公布号 DE10255085(A1) 申请公布日期 2003.06.12
申请号 DE2002155085 申请日期 2002.11.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, CHUL-SOO
分类号 G11C11/401;G11C7/00;G11C7/10;G11C11/407;G11C11/408;(IPC1-7):G11C7/00 主分类号 G11C11/401
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