发明名称 |
Copper plating bath and plating method for substrate using the copper plating bath |
摘要 |
A copper plating bath comprising a reaction condensate of an amine compound and glycidyl ether and/or a quaternary ammonium derivative of this reaction, condensate, and a plating method using this copper plating bath are disclosed. A copper plating bath capable of providing highly reliable copper plating on a substrate such as a silicone wafer semiconductor substrate or printed board having minute circuit patterns and small holes such as blind via-holes, through-holes, and the like, and a method of copper plating using the copper plating bath can be provided.
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申请公布号 |
US2003106802(A1) |
申请公布日期 |
2003.06.12 |
申请号 |
US20020140882 |
申请日期 |
2002.05.09 |
申请人 |
HAGIWARA HIDEKI;KIMIZUKA RYOICHI;TERASHIMA YOSHITAKA;MARUYAMA MEGUMI;MIYAKE TAKASHI;NAGASAWA HIROSHI;SAHODA TSUYOSHI;IIMURA SEIJI |
发明人 |
HAGIWARA HIDEKI;KIMIZUKA RYOICHI;TERASHIMA YOSHITAKA;MARUYAMA MEGUMI;MIYAKE TAKASHI;NAGASAWA HIROSHI;SAHODA TSUYOSHI;IIMURA SEIJI |
分类号 |
C25D3/38;H05K3/42;(IPC1-7):C25D3/38 |
主分类号 |
C25D3/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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