发明名称 Copper plating bath and plating method for substrate using the copper plating bath
摘要 A copper plating bath comprising a reaction condensate of an amine compound and glycidyl ether and/or a quaternary ammonium derivative of this reaction, condensate, and a plating method using this copper plating bath are disclosed. A copper plating bath capable of providing highly reliable copper plating on a substrate such as a silicone wafer semiconductor substrate or printed board having minute circuit patterns and small holes such as blind via-holes, through-holes, and the like, and a method of copper plating using the copper plating bath can be provided.
申请公布号 US2003106802(A1) 申请公布日期 2003.06.12
申请号 US20020140882 申请日期 2002.05.09
申请人 HAGIWARA HIDEKI;KIMIZUKA RYOICHI;TERASHIMA YOSHITAKA;MARUYAMA MEGUMI;MIYAKE TAKASHI;NAGASAWA HIROSHI;SAHODA TSUYOSHI;IIMURA SEIJI 发明人 HAGIWARA HIDEKI;KIMIZUKA RYOICHI;TERASHIMA YOSHITAKA;MARUYAMA MEGUMI;MIYAKE TAKASHI;NAGASAWA HIROSHI;SAHODA TSUYOSHI;IIMURA SEIJI
分类号 C25D3/38;H05K3/42;(IPC1-7):C25D3/38 主分类号 C25D3/38
代理机构 代理人
主权项
地址