SEMICONDUCTOR DEVICE HAVING STRUCTURE OF MIM CAPACITOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device having a structure of an MIM(Metal/Insulating layer/Metal) capacitor and a fabricating method thereof are provided to reduce the number of exposure processes by using an existing method for forming the MIM capacitor with an aluminum wiring layer. CONSTITUTION: A lower electrode(124) includes the first copper layer. The first interlayer dielectric(125,130) is formed on the lower electrode. An MIM capacitor(140) is formed with a lower barrier electrode(141), a dielectric layer(143), and an upper barrier electrode(145) on the first interlayer dielectric. An intermediate electrode of the second copper layer is used for filling an inner space of the MIM capacitor. The second interlayer dielectric(155,160) are formed on the intermediate electrode. A connective contact plug includes the third copper layer in order to fill a connective hole of the second interlayer dielectric. An upper electrode(181) including the fourth copper layer(187) is formed on the connective contact plug.