| 摘要 |
A method for ashing a semiconductor device is provided. In the method, the semiconductor substrate, on which a metal interconnection and a photoresist pattern are formed, is processed using H2O, and then, by using a mixture of O2, N2, and H2O. The process is performed at least twice repeatedly. As a result, corrosion of the metal interconnection is inhibited and a bridge caused by conductive polymer is prevented.
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