发明名称 |
Magnetic random access memory |
摘要 |
The present invention discloses a magnetic random access memory for reading two or more data, by sensing the current flowing into source and drain regions. The current is regulated by the amount of a current flowing through an MRJ in an MRAM cell according to a word line voltage. In order to accomplish this object of the present invention, the MRAM comprises a data detecting circuit for converting a current flowing through an MTJ in the MRAM cell into a voltage and detecting data resulting in magnetization orientation ge.
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申请公布号 |
US2003107915(A1) |
申请公布日期 |
2003.06.12 |
申请号 |
US20020278070 |
申请日期 |
2002.10.23 |
申请人 |
KIM JUNG HWAN;KANG HEE BOK;LEE GEUN IL |
发明人 |
KIM JUNG HWAN;KANG HEE BOK;LEE GEUN IL |
分类号 |
G11C11/15;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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