发明名称 Semiconductor device with analysis prevention feature
摘要 A semiconductor device includes a semiconductor substrate having a main circuit part including a predetermined active element and the like on a silicon substrate, an interconnection transmitting to the active element an externally supplied input signal or transmitting an output signal to be supplied to any external unit, an opening for input/output of the externally supplied signal or the signal to be supplied to any external unit to and from the interconnection, an insulating protection film for protecting the interconnection and an underlying portion thereof, a conductive metal film arranged above the main circuit part, and an aluminum oxide film arranged to cover the conductive metal film. This structure can preclude the main circuit part from being discerned by visual observation, a visible light microscope and an IR microscope, and accordingly imitation, copy and altering of the main circuit part by other people can be prevented.
申请公布号 US2003107135(A1) 申请公布日期 2003.06.12
申请号 US20020322572 申请日期 2002.12.19
申请人 SHARP KABUSHIKI KAISHA 发明人 MATSUMOTO HIRONORI
分类号 H01L21/3205;H01L21/316;H01L21/318;H01L21/822;H01L23/52;H01L23/58;H01L27/04;H01L27/08;(IPC1-7):H01L23/48 主分类号 H01L21/3205
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