| 摘要 |
PURPOSE: A semiconductor memory device and a fabricating method thereof are provided to form a cell circuit of the memory device compatible with a fabricating process of a logic device by forming the memory device with two transistor including a stacked gate MOS transistor. CONSTITUTION: A sensing transistor(Tr2) includes a lower gate(G2'), an upper gate(G2), a source(S2), and a drain(D2). A switching transistor(Tr1) includes a gate(G1), a source(S1), and a drain(D1). At this time, the source of the switching transistor is connected to the lower gate of the sensing transistor. A source line is connected to the source of the sensing transistor. The gate of the switching transistor and the upper gate of the sensing transistor are connected to the same word line. The drain of the switching transistor is connected to a data line. The drain of the sensing transistor is connected to a bit line.
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