SEMICONDUCTOR MEMORY DEVICE WITH PLURAL INTERNAL SUPPLY VOLTAGE SOURCES

摘要

PURPOSE: A semiconductor memory device with plural internal supply voltage sources is provided to select necessary voltages by using a voltage selection circuit and a plurality of voltage pads. CONSTITUTION: A semiconductor memory device comprises a package power pin(10), a power pad(21), a voltage selection circuit(22), an internal reference voltage generation circuit(24), and a DC voltage generation circuit(25). The power pad receives the supply voltage from the package power pin and supplies the supply voltage to each circuit block. The voltage selection circuit receives the first reference voltage and an MRS control signal and outputs selection signals. The internal reference voltage generation circuit receives the selection signals and generates the internal reference voltage. The DC voltage generation circuit receives signals from the internal reference voltage generation circuit and generates the internal DC voltage.