| 摘要 |
A method for creating a silicon dioxide film of a predetermined thickness by repeating the steps of depositing a silicon film on a silicon substrate and changing it to a silicon dioxide film, in which the surface roughness of the created silicon dioxide film can be adequately set and the rate of grow of t he silicon film to be deposited can be also adequately set. By repeating severa l times the steps of depositing polysilicon, epitaxial silicon, or amorphous silicon on a silicon substrate or on a silicon dioxide film formed by therma l oxidation on a silicon substrate to form a silicon film and changing the fil m to a silicon dioxide film by thermal oxidation, a silicon dioxide film is created.
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