GCIB PROCESSING TO IMPROVE INTERCONNECTION VIAS AND IMPROVED INTERCONNECTION VIA

摘要

Reactive gas cluster ion beam processing using gas cluster ions comprising a mixture of gases cleans and/or etches the bottoms of electrical interconnect vias and/or trenches in integrated circuits(900) to produce interconnect structures(902) with lower contact resistances and better reliability than was previously achieved with conventional processes. In one embodiment, an electrical interconnect via structure (902) uses a dielectric or high resistivity diffusion barrier material (702).