发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 A semiconductor device comprising a first semiconductor chip (5) having first terminals (7) on one side thereof, a second semiconductor chip (1a) larger than the first semiconductor chip (5) being stacked thereon and having second terminals (3) on one side thereof, an insulation film (10) formed on the second semiconductor chip (1a) to cover the first semiconductor chip (5), a plurality of holes (10a) made in the insulation film (10) at least in the peripheral region of the first semiconductor chip (5), vias (11a) made in film shape on the inner circumferential face and the bottom face of the holes (10a) and connected electrically with the second terminals (3) of the second semiconductor chip (1a), a wiring pattern (11b) formed on the upper surface of the insulation film (10), and external terminals (14) connected onto the wiring pattern (11b).
申请公布号 WO03049184(A1) 申请公布日期 2003.06.12
申请号 WO2001JP10722 申请日期 2001.12.07
申请人 FUJITSU LIMITED;MATSUKI, HIROHISA;AIBA, YOSHITAKA;SATO, MITSUTAKA;OKAMOTO, TADAHIRO 发明人 MATSUKI, HIROHISA;AIBA, YOSHITAKA;SATO, MITSUTAKA;OKAMOTO, TADAHIRO
分类号 H01L21/60;H01L23/12;H01L23/31;H01L23/538;H01L25/04;H01L25/065 主分类号 H01L21/60
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