| 摘要 |
<p>A hydrogen diffusion barrier (120, 160, 204, 227, 228, 284, 391, 724, 728) in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide (110, 216, 396, 240, 738), such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide, and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450°C or less. In some embodiments, a supplemental hydrogen barrier layer (229, 393) comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.</p> |
