Semiconductor memory device employing temperature detection circuit

摘要

A temperature detection circuit is provided. A first delay unit has a first delay time that varies based on a temperature. The first delay unit receives a reference signal and generates a first delayed reference signal. A second delay unit has a second delay time that varies based on the temperature, wherein the second delay time varies less than the first delay time for a given temperature variance. The second delay unit to receives the reference signal and generates a second delayed reference signal. A temperature detecting unit receives the first and second delayed reference signals and generates a temperature detection signal based on the first and second delayed reference signals.