CAPACITOR STRUCTURE OF SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

摘要

PURPOSE: A capacitor structure of a semiconductor device and a forming method thereof are provided to prevent the concentration of electric field on an edge of a lower electrode region by forming a lightly doped region on the edge of the lower electrode region. CONSTITUTION: An isolation layer pattern is formed on a predetermined region of a semiconductor substrate in order to define an active region. A lower electrode region(120) is formed on a center portion of the active region of the semiconductor substrate. A capacitor dielectric layer is formed on the active region. An upper electrode(140) is formed at an upper portion of the active region in order to expose an edge of the lower electrode region. A lightly doped region(150) is formed on the active region around the upper electrode. The lightly doped region is overlapped with the edge of the lower electrode region.