| 摘要 |
<p>A method for creating a silicon dioxide film of a predetermined thickness by repeating the steps of depositing a silicon film on a silicon substrate and changing it to a silicon dioxide film, in which the surface roughness of the created silicon dioxide film can be adequately set and the rate of grow of the silicon film to be deposited can be also adequately set. By repeating several times the steps of depositing polysilicon, epitaxial silicon, or amorphous silicon on a silicon substrate or on a silicon dioxide film formed by thermal oxidation on a silicon substrate to form a silicon film and changing the film to a silicon dioxide film by thermal oxidation, a silicon dioxide film is created.</p> |
