| 发明名称 |
NITRIDING METHOD FOR INSULATION FILM, SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, SUBSTRATE TREATING DEVICE AND SUBSTRATE TREATING METHOD |
| 摘要 |
Nitrogen radicals are formed by high-frequency plasma, and the nitrogen radicals are supplied onto the surface of an insulation film containing oxygen to thereby nitride the surface of the insulation film. The oxygen-containing insulation film is up to 0.4 nm in thickness, and a high- dielectric film is formed on the surface-nitrided insulation film. The nitrogen radicals are supplied by a gas flow formed so as to move along the surface of the insulation film.
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| 申请公布号 |
WO03049173(A1) |
申请公布日期 |
2003.06.12 |
| 申请号 |
WO2002JP12788 |
申请日期 |
2002.12.05 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
IGETA, MASANOBU;AOYAMA, SHINTARO;SHINRIKI, HIROSHI;TAKAHASHI, TSUYOSHI |
| 分类号 |
H01L21/00;H01L21/28;H01L21/314;H01L21/316;H01L29/51;(IPC1-7):H01L21/318;H01L21/31;H01L29/78 |
主分类号 |
H01L21/00 |
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