FORMULATION CONTAINING 1,3-DICARBONYL COMPOUND CHELATING AGENT AND COPPER CORROSION INHIBITING AGENT, FOR STRIPPING RESIDUE FROM SEMICONDUCTOR SUBSTRATE CONTAINING COPPER STRUCTURE

摘要

PURPOSE: A formulation for cleaning a semiconductor wafer, a preparation method of a semiconductor wafer by using the formulation and a method for removing the residue from a wafer before resist plasma ashing process by using the formulation are provided, to remove the inorganic residue from a semiconductor wafer containing the delicate copper interconnecting structure. CONSTITUTION: The formulation comprises 2-98 wt% of at least one organic amine; 0-50 wt% of water; 0.1-60 wt% of a 1,3-dicarbonyl compound chelating agent; 0-25 wt% of at least one additional other chelating agent; 0.1-40 wt% of a nitrogen-containing carboxylic acid or imine; and 2-98 wt% of a polar organic solvent. The preparation method comprises the steps of plasma etching a metallized layer from the surface of a wafer; plasma ashing the resist from the surface of a wafer; and cleaning the wafer by using the formulation.