CHEMICAL VAPOR DEPOSITION REACTOR

摘要

A chemical vapor deposition (CVD) reactor (900) comprising: a reactor chamber (950); a substrate holder (46) located within the reactor chamber; a gas inlet system (922) arranged to provide a gas flow rotating above the substrate holder; and a gas exhaust port (930). The flow characteristics of the precursor gas are controlled to equalize the thin film thickness across the substrate surface by forcing the gas into a smaller volume as it moves across the substrate. With a central exhaust, this is done by reducing the height (1506, 1524) of the reactor chamber with increasing proximity to the center (1508) of the reactor chamber so that the reactor volume per unit distance decreases as the gas moves from the inlet to the exhaust.