Verfahren zum Polieren von Halbleiterwafern unter Verwendung eines beidseitigen Polierers

摘要

During polishing of the semiconductor wafer by using a double-sided polisher, a larger difference as compared to the prior art is created between a frictional resistance acting on a front surface of a silicon wafer from an upper surface plate side and a frictional resistance acting on a back surface of the silicon wafer from a lower surface plate side. Thereby, respective wafers can be rotated at as 0.1 - 1.0 rpm within corresponding wafer holding holes. Accordingly, the rotation of the wafer would not be suspended even if there were any defective condition induced during polishing. Further, partial variation or deviation in polishing volume particular in the outer periphery of the wafer would be hard to occur. Therefore, the polish-sagging is suppressed and thus the improved degree of flatness of the wafer could be obtained.