发明名称 MEMORY CONTROLLER STRUCTURE CAPABLE OF REMOVING CLOCK SKEW AND MEMORY DEVICE
摘要 PURPOSE: A memory controller structure capable of removing a clock skew and a memory device is provided to operate at a maximum frequency supplied by a synchronous dynamic random access memory(SDRAM) by using an interface block capable of overcoming the performance deterioration due to the skew between the clock signals. CONSTITUTION: A memory controller structure capable of removing a clock skew with a memory device includes a core logic(20) for generating a plurality of control signals and write signals supplied to the synchronous dynamic random access memory(SDRAM) device, a first interface block(30) for temporally storing the control signals and the write data from the core logic(20) in response to the first clock signal of the memory controller, a second interface block(40) for firstly latching the read data outputted from the synchronous memory device in response to the second clock signal synchronous with the first clock signal of the memory controller and for temporally storing the latched read data in response to the first clock signal and a third interface block(50) for generating the third clock signal supplied to the synchronous memory device in response to the first clock signal of the memory controller and for generating the second clock signal at the same time.
申请公布号 KR20030045264(A) 申请公布日期 2003.06.11
申请号 KR20010075680 申请日期 2001.12.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, SIN CHAN;MUN, JONG EOK
分类号 G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/407
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