| 摘要 |
A cold-cathode electron source having an improved utilization efficiency of an electron beam and a simple structure. The cold-cathode electron source comprises a gate electrode (4) provided on a substrate (2) through an insulating layer (3) and an emitter (6) extending through the insulating layer (3) and the gate electrode (4) and disposed in an opening of the gate. During the emission of electrons from the emitter (6), the following relationships are satisfied: 10 ÄV/ mu mÜ ≥ (Va-Vg)/(Ha-Hg) ≥ Vg/Hg; and Vg/Hg ÄV/ mu mÜ ≥ Va x 10<-4> x (9.7-1.3 x 1n (Hg)) x (1000/Ha)<0.5>, where Ha Ä mu mÜ is an anode-emitter distance, Va ÄVÜ is an anode-emitter voltage, Hg Ä mu mÜ is a gate-emitter distance, and Vg ÄVÜ is a gate-emitter voltage. <IMAGE> |
