| 摘要 |
PURPOSE: A method for depositing material using a mask for an etching process is provided to be capable of reducing the failure of a semiconductor substrate and fabrication cost, and simplifying manufacturing processes. CONSTITUTION: A mask pattern layer(21) is formed on the upper portion of a semiconductor substrate(20) by coating mask material. The upper portion of the semiconductor substrate(20) is etched by using the mask pattern layer(21) as a mask. A kind of material(22) is deposited on the entire surface of the resultant structure. The mask pattern layer(21) and the material(22) formed on the mask pattern layer(21), are removed. Preferably, the deposited material is one selected from a group consisting of metal, semiconductor, organic compound and an insulating layer.
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