| 摘要 |
PURPOSE: To reduce sensitivity to the other axes of the outputs in two axial directions of a semiconductor dynamical quantity sensor, that is constituted to detect the dynamical quantities generated in the two axial directions, based on the capacity change between a mobile electrode displaceable in the two axial directions and fixed electrodes faced to the mobile electrode with detection intervals in between, by forming the electrodes on a semiconductor substrate. CONSTITUTION: Of the detection capacities CX11, CX21, CX12, CX22, CY11, CY21, CY12, and CY22 formed between the comb-shaped mobile electrode 30 and fixed electrodes 40-70, the displacement of the mobile electrode 30 in first direction X or second direction Y is detected, based on the sum total of four differential outputs (CX21-CX11), (CX12-CX22), (CY21-CY11) and (CY12-CY22). |
