LONG WAVELENGTH SURFACE EMITTING SEMICONDUCTOR LASER DIODE

摘要

PURPOSE: A long wavelength surface emitting semiconductor laser diode is provided to manufacture a vertical cavity surface emitting laser(VCSEL) capable of oscillating a single longitudinal and transverse modes by using a material to have a grating matching with an InP substrate difficult to manufacture distributed Bragg reflector(DBR) of a high reflection due to the small difference of refraction index. CONSTITUTION: A long wavelength surface emitting semiconductor laser diode includes an InP substrate(5), a cavity(3) provided with an active layer and a clad layer formed on the InP substrate(5), an upper semiconductor distributed Bragg reflector(DBR)(4) and a lower semiconductor DBR(1) formed the upper and the lower portions of the cavity(3), a lower insulator DBR(1a) formed in contact with the lower semiconductor DBR(1) and an upper insulator DBR(4a) formed on the top portion of the substrate(5).