| 发明名称 |
Method of forming semiconductor device with LDD structure |
| 摘要 |
A NMOSFET semiconductor device is formed having an LDD structure by simultaneous co-implantation of arsenic and phosphorous to form an N- layer. The co-implantation is performed subsequent to the formation of the gate structure and a thin (100 Å-300 Å) gate spacer but prior to the implantation of a highly doped N+ source/drain.
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| 申请公布号 |
US6576521(B1) |
申请公布日期 |
2003.06.10 |
| 申请号 |
US19980056555 |
申请日期 |
1998.04.07 |
| 申请人 |
AGERE SYSTEMS INC. |
发明人 |
CHAUDHRY SAMIR;CHETLUR SUNDAR S.;VAIDYA HEM M. |
| 分类号 |
H01L21/265;H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
| 代理机构 |
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