<p>A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.</p>
申请公布号
AU2002366091(A1)
申请公布日期
2003.06.10
申请号
AU20020366091
申请日期
2002.11.18
申请人
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人
MOUNGI, G. BAWENDI;HENRY, I. SMITH;HANS, J. EISLER;VIKRAM, C. SUNDAR;MICHAEL, E. WALSH;VICTOR, I. KLIMOV
