发明名称 SPECIALIZED SUBSTRATES FOR USE IN SEQUENTIAL LATERAL SOLIDIFICATION PROCESSING
摘要 Substrates having modified effective thermal conductivity for use in the sequential lateral solidification process are disclosed. In one arrangement, a substrate includes a glass base layer, a low conductivity layer formed adjacent to a surface of the base layer, a high conductivity layer formed adjacent to the low conductivity layer, a silicon compound layer formed adjacent to the high conductivity layer, and a silicon layer formed on the silicon compound layer. In an alternative arrangement, the substrate includes an internal subsurface melting layer which will act as a heat reservoir during subsequent sequential lateral solidification processing.
申请公布号 AU2002219913(A1) 申请公布日期 2003.06.10
申请号 AU20020219913 申请日期 2001.11.28
申请人 THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK 发明人 JAMES, S. IM
分类号 H01L21/20;(IPC1-7):H01L21/20 主分类号 H01L21/20
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