| 摘要 |
FIELD: electronic engineering. SUBSTANCE: maskblank has coating and resist film on glass base. Coating material is composition of general formula MbEn, where M is chromium, iron; E is nitrogen, oxygen; m and n are atomic proportions of M and E; m > 3 and n <4. Used as resist film is photoresist or electron-sensitive resist. Base- to-coating-to-resist-film thickness ratio is (1-3).103:1:(3-6). EFFECT: enhanced stability of lithographic characteristics due to mentioned preset thickness ratio. 2 cl, 1 tbl
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