| 摘要 |
An undoped GaN buffer layer, an n-type GaN layer and a p-type GaN layer are successively formed on a sapphire substrate, and a partial region from the p-type GaN layer to the n-type GaN layer is removed, to expose the n-type GaN layer. Ti films having a thickness of 3 to 100 Å and Pt films are successively formed on the p-type GaN layer and on the exposed upper surfaces of the n-type GaN layer. Consequently, a p electrode in ohmic contact with the p-type GaN layer and an n electrode in ohmic contact with the n-type GaN layer are formed without being alloyed by heat treatment.
|
