Static-type semiconductor memory device

摘要

An SRAM of the present invention comprises a plurality of memory cells, which are formed over a plurality of wells, which store data and which do not have a well contact region for fixing the potential of the wells, and a plurality of well contact cells for fixing the potential of the wells that are formed over the plurality of wells so as to adjoin the memory cells, wherein the areas of the memory cells and the areas of the well contact cells are equal.