| 摘要 |
The magnetoresistive element has a first ferromagnetic element, a nonmagnetic layer element, and a second ferromagnetic layer element arranged in such a way that the nonmagnetic layer element is disposed between the first ferromagnetic layer element and the second ferromagnetic layer element. The first ferromagnetic layer element and the second ferromagnetic layer element are formed of substantially the same material, but they differ in their extent parallel to the interface to the nonmagnetic layer element in that they have different measurements in at least one dimension. The magnetoresistive element is suitable both as a sensor element and as a memory element in a memory cell configuration.
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