| 摘要 |
The present invention provides a non-volatile semiconductor memory device including a sector selecting circuit. When a non-defective sector is designated by an address signal, a spare decoder outputs a signal such that a NAND gate can select the non-defective sector, when a defective sector is designated by the address signal, the spare decoder outputs a signal for activating an alternate non-defective sector, and when the alternate non-defective sector is designated by the address signal, a signal for making all of a plurality of sectors non-selective. As a result, it is possible to reduce a defective rate of the non-volatile semiconductor memory device.
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